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| EIC7179-12 ISSUED 02/29/2008 7.10-7.90 GHz 12-Watt Internally Matched Power FET 2X 0.079 MIN 4X 0.102 FEATURES * * * * * * * * 7.10- 7.90GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41.5 dBm Output Power at 1dB Compression 9.0 dB Power Gain at 1dB Compression 38% Power Added Efficiency -47 dBc IM3 at PO = 28.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH 0.945 0.803 Excelics EIC7179-12 0.024 0.580 YYWW SN 0.315 0.685 0.010 0.158 0.617 0.004 0.055 0.095 0.055 0.168 ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 7.10-7.90GHz VDS = 10 V, IDSQ 3250mA Gain at 1dB Compression f = 7.10-7.90GHz VDS = 10 V, IDSQ 3250mA Gain Flatness f = 7.10-7.90GHz VDS = 10 V, IDSQ 3250mA Power Added Efficiency at 1dB Compression f = 7.10-7.90GHz VDS = 10 V, IDSQ 3200mA Drain Current at 1dB Compression f = 7.10-7.90GHz Output 3rd Order Intermodulation Distortion f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L2 VDS = 10 V, IDSQ 65% IDSS f = 7.90GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 Caution! ESD sensitive device. MIN 40.5 8.0 TYP 41.5 9.0 MAX UNITS dBm dB 0.6 38 3500 -45 -47 6500 -2.5 2.3 7900 -4.0 2.8 o dB % 4150 mA dBc mA V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 62 mA 2) S.C.L. = Single Carrier Level. Note: 1) Tested with 50 Ohm gate resistor. 3) Overall Rth depends on case mounting. MAXIMUM RATING AT 25C1,2 SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 15 -5 129.6mA -21.6mA 37dBm 175 oC -65 to +175 oC 54W CONTINUOUS2 10V -4V 43.2mA -7.2mA @ 3dB Compression 175 oC -65 to +175 oC 54W Vds Vgs Igsf Igsr Pin Tch Tstg Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 2 Revised February 2008 EIC7179-12 ISSUED 02/29/2008 7.10-7.90 GHz 12-Watt Internally Matched Power FET S-PARAMETERS Measured at Vds=10V, IDS=3250mA Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 2 Revised February 2008 |
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